Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/article/10.1007/s10853-018-2695-4/fulltext.html
Reference40 articles.
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2. Robertson J (2008) Maximizing performance for higher K gate dielectrics. J Appl Phys 104(12):1–7
3. Wallace RM, Wilk GD (2003) High-κ dielectric materials for microelectronics. Crit Rev Solid State Mater Sci 28(4):231–285
4. Zhao X, Vanderbilt D (2002) First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide. Phys Rev B 65(23):75105
5. Park B-E, Oh I-K, Mahata C, Lee CW, Thompson D, Lee HBR, Maeng WJ, Kim H (2017) Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors. J Alloys Compd 722:307–312
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