Affiliation:
1. Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi 830046, China
2. School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China
Abstract
This article presents the sol-gel method for depositing La2O3 thin films on n-type Si substrates and quartz substrates, and investigates the impact of annealing temperature on the microcomposition, surface morphology, optical properties, and band characteristics of the films. X-ray diffraction (XRD) analysis indicates that the films are amorphous below 500 °C, with annealing resulting in a hexagonal-phase La2O3 (h-a2O3) and new non-hydrated impurities. Fourier-transform infrared (FTIR) analysis reveals that the prepared La2O3 film is unaffected by moisture. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) provide evidence that the La2O3 film has a smooth, uniform surface without cracks. The roughness increases from 0.426 nm to 1.200 nm, and the film thins from 54.85 nm to 49.80 nm as the annealing temperature rises. The film’s transmittance is above 75%, as measured by UV-Vis, and the calculated optical bandgap increases from 5.11 eV to 5.75 eV. The calculated band offset of the La2O3 film is greater than 1 eV, which meets the minimum requirements for MOS devices, thus providing promising prospects for La2O3 films in MOS applications.
Funder
Natural Science Foundation of Xinjiang Uygur Autonomous Region
National Natural Science Foundation of China
Tianshan Innovation Team Program of Xinjiang Uygur Autonomous Region
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces
Cited by
2 articles.
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