Effect of Fe impurity on performance of La2O3 as a high k gate dielectric-Reference-Cited by-同舟云学术

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Effect of Fe impurity on performance of La2O3 as a high k gate dielectric

Published:2019-11 Issue:16 Volume:45 Page:21015-21022
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Li Shuan,Lin Youyu,Wu Yanqing,Guo Yanru,Yu Hongen,Miao Ruiying,Wang Zhiqiang,Tian Wenhuai,Li Xingguo

Funder

Ministry of Science and Technology of the People's Republic of China

National Nature Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. 2-D layered materials for next-generation electronics: opportunities and challenges;Cao;IEEE Trans. Electron Devices,2018

2. Monolayer molybdenum disulfide transistors with single-atom-thick gates;Zhu;Nano Lett.,2018

3. A review on carbon nanotube field effect transistors (CNTFETs) for ultra-low power applications;Prakash;Renew. Sustain. Energy Rev.,2018

4. High dielectric constant oxides;Robertson;Eur. Phys. J. Appl. Phys.,2004

5. High-K materials and metal gates for CMOS applications;Robertson;Math. Sci. Eng. R,2015

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1. Electrical and structural properties of BiFeO3 thin films with four distinct buffer layers: La2O3, Pr2O3, Sm2O3, and Tm2O3;Physica B: Condensed Matter;2024-09

2. Effect of Annealing Temperature on the Structure and Properties of La2O3 High-K Gate Dielectric Films Prepared by the Sol-Gel Method;Coatings;2023-06-12

3. Separation and purification of Yb2O3 by ion exchange chromatography and preparation of ultra-high purity Yb2O3;Rare Metals;2023-05-20

4. High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics;ACS Applied Electronic Materials;2023-03-28

5. Exploration of impurity migration behavior in the process of lanthanum purification by Czochralski method;Separation and Purification Technology;2023-02

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