Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3007978
Reference16 articles.
1. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
2. Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
3. In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness
4. Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer
5. Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation
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2. Si/GaAs Hetero Junction Tunnel FET: Design and Investigation;Journal of Nanoelectronics and Optoelectronics;2019-10-01
3. Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2 O3 Passivation Layer and Forming Gas Annealing;Advanced Electronic Materials;2018-02-19
4. Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing;Journal of Alloys and Compounds;2017-05
5. Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces;Progress in Crystal Growth and Characterization of Materials;2016-12
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