Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer-Reference-Cited by-同舟云学术

Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer

Published:2007-08-20 Issue:8 Volume:91 Page:082908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Sung Il,Ok Injo,Kim Hyoung-Sub,Zhu Feng,Zhang Manhong,Yum Jung Hwan,Han Zhao,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2775048

Reference6 articles.

1. Hafnium Titanate bilayer structure multimetal dielectric nMOSCAPs

2. Band offsets of wide-band-gap oxides and implications for future electronic devices

3. Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer

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