Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2 O3 Passivation Layer and Forming Gas Annealing-Reference-Cited by-同舟云学术

Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2 O3 Passivation Layer and Forming Gas Annealing

Published:2018-02-19 Issue:4 Volume:4 Page:1700543
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Jiang Shanshan¹,He Gang¹,Liu Mao²,Zhu Li¹,Liang Shuang¹,Li Wendong¹,Sun Zhaoqi¹,Tian Mingliang¹³

Affiliation:

1. School of Physics and Materials Science; Radiation Detection Materials & Devices Lab; Anhui University; Hefei 230039 P.R. China

2. Key Laboratory of Materials Physics; Anhui Key Laboratory of Nanomaterials and Nanostructure; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P.R. China

3. Anhui Key Laboratory for Condensed Matter Physics at Extreme Conditions; High Magnetic Field Laboratory of Chinese Academy of Science; Hefei 230031 P.R. China

Funder

National Natural Science Foundation of China

Technology Foundation for Selected Overseas Chinese Scholar

Ministry of Personnel of China

Natural Science Foundation of Anhui Province

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Lowering the density of electronic defects on organic-functionalized Si(100) surfaces

2. Alternative dielectrics to silicon dioxide for memory and logic devices