Si/GaAs Hetero Junction Tunnel FET: Design and Investigation
Author:
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications;ECS Journal of Solid State Science and Technology;2023-12-01
2. Leakage mitigation in NW FET using negative Schottky junction drain and its process variation analysis;Journal of Computational Electronics;2021-11-10
3. COMPARISON BETWEEN HETERO-JUNCTION TECHNIQUE TFET AND CONVENTIONAL TFET;2021 International Conference on Computer Communication and Informatics (ICCCI);2021-01-27
4. Effect of band to band tunnelling (BTBT) on multi-gate Tunnel field effect transistors (TFETs)-A Review;IOP Conference Series: Materials Science and Engineering;2021-01-01
5. Pseudo Split Gate In 0 . 53 Ga 0 .47 As/InP Hetero‐Junction Tunnel FET : Design and Analysis;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2020-11-02
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