Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2754640
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1. High-κ gate dielectrics: Current status and materials properties considerations
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4. Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks
5. Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs
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3. Characteristics of metal–oxide–semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01
4. Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks;Applied Physics Letters;2012-01-09
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