Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks-Reference-Cited by-同舟云学术

Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

Published:2012-01-09 Issue:2 Volume:100 Page:023501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Heng-Sheng,Samanta Piyas,Tzeng Tsung-Jian,Chen Shuang-Yuan,Liu Chuan-Hsi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3675454

Reference15 articles.

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2. High-κ gate dielectrics: Current status and materials properties considerations

3. Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films

4. A. Shanware, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, H. Bu, M. J. Bevan, R. Khamankar, S. Aur, P. E. Nicollian, J. McPherson et al., in Proceedings of the International Reliability Physics Symposium (IEEE, Piscataway, 2003), pp. 208–212.

5. Charge trapping and detrapping characteristics in hafnium silicate gate stack under static and dynamic stress

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