Room temperature formation of Hf-silicate layer by pulsed laser deposition with Hf-Si-O ternary reaction control
Author:
Affiliation:
1. School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan
2. School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
New Energy and Industrial Technology Development Organization (NEDO)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4964932
Reference30 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Emerging Applications for High K Materials in VLSI Technology
4. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
5. Hafnium and zirconium silicates for advanced gate dielectrics
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