Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124036
Reference11 articles.
1. MOS transistors with stacked SiO/sub 2/-Ta/sub 2/O/sub 5/-SiO/sub 2/ gate dielectrics for giga-scale integration of CMOS technologies
2. Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric
3. Crystalline Oxides on Silicon: The First Five Monolayers
4. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
5. Feasibility study to determine the suitability of using TiN/W and Si 1-x Ge x as alternative gate materials for sub-0.1-μm gate-length PMOS devices
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