Spatiotemporal modes of fast avalanche switching of high-voltage layered semiconductor structures: From subnano to picosecond range
Author:
Affiliation:
1. Ioffe Institute, 26 Politekhnicheskaya, St.-Petersburg 194021, Russia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5097831
Reference53 articles.
1. High-power subnanosecond switch
2. 1000‐V, 300‐ps pulse‐generation circuit using silicon avalanche devices
3. Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures
4. Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior
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