Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior
Author:
Affiliation:
1. Ioffe Institute, 26 Politekhnicheskaya, St. Petersburg 194021, Russia
2. ITMO University, 49 Kronverksky Pr., St. Petersburg 197101, Russia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5004524
Reference29 articles.
1. High-power subnanosecond switch
2. 1000‐V, 300‐ps pulse‐generation circuit using silicon avalanche devices
3. New principles of high power switching with semiconductor devices
4. Silicon diodes in avalanche pulse-sharpening applications
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