Direct comparison of silicon carbide and silicon diode avalanche shaper in multi-pulse applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
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4. Performance evaluation of picosecond high-voltage power switches based on propagation of superfast impact ionization fronts in SiC structures;Rodin;J. Appl. Phys.,2006
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1. Investigation on Triggering Mode and Criterion of 4H-SiC Diode Avalanche Shaper;IEEE Transactions on Electron Devices;2023-08
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