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The lock-on effect and collapsing bipolar Gunn domains in high-voltage GaAs avalanche p-n junction diode

  • Published:2022-10 Issue: Volume:354 Page:114895
  • ISSN:0038-1098
  • Container-title:Solid State Communications
  • language:en
  • Short-container-title:Solid State Communications

Author:

Rozhkov Alexander,Ivanov MikhailORCID,Rodin Pavel

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference38 articles.

1. Toward Pulsed Power Uses of Photoconductive Switches: Closing Switches,” Proceedings of the 6th IEEE Pulsed Power Conference;Loubriel,1987

2. Recent Developments in Opening Photoconductive Semiconductor Switches,” Proceedings of the 6th IEEE Pulsed Power Conference;Zutavern,1987

3. Photoconductive semiconductor switch experiments for pulsed power applications;Zutavern;IEEE Trans. Electron. Dev.,1990

4. High-Power Optically Activated Solid-State Switches,1994

5. F.J. Zutavern and G.M. Loubriel, “High-voltage Lateral Switches from Silicon or Gallium Arsenide,” in [4], pp.245-296.

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Subnanosecond switching of GaAs diode due to impact ionization in collapsing bipolar Gunn domains;Solid State Communications;2024-02

2. Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch;IEEE Transactions on Electron Devices;2023-11

3. Bipolar Gunn Effect and Subnanosecond Switching of the High-Voltage GaAs Diodes Initiated by Microsecond Kilovolt Voltage Ramp;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

4. Influence on the Parameters of GaAs-based HG PCSS Switching in Lock-On Mode at Laser Radiation With a Wavelength of 355 nm and 1064 nm;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

5. The physical mechanism underpinning superfast switching of GaAs S-diode;Solid State Communications;2023-05
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