Bipolar Gunn Effect and Subnanosecond Switching of the High-Voltage GaAs Diodes Initiated by Microsecond Kilovolt Voltage Ramp
Author:
Affiliation:
1. Ioffe Institute,Department of Solid-State Electronics,St. Petersburg,Russia
2. Centre of Nanoheterostructure Physics, Ioffe Institute,St. Petersburg,Russia
Funder
Russian Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10224902/10225012/10225192.pdf?arnumber=10225192
Reference21 articles.
1. Selected Topics in Electronics and Systems
2. The lock-on effect and collapsing bipolar Gunn domains in high-voltage GaAs avalanche p-n junction diode
3. New power semiconductor devices for generation of nano- and subnanosecond pulses;kardo-sysoev;Ultra-Wideband Radar Technology,2001
4. Subnanosecond current drops in delayed breakdown of silicon p-n junctions;grekhov;Sov Tech Phys Lett,1979
5. Analytical model for the destruction mechanism of GTO-like devices by avalanche injection
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