Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch-Reference-Cited by-同舟云学术

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Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch

Published:2023-11 Issue:11 Volume:70 Page:5778-5785
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hu Long¹^ORCID,Huang Jia¹,Yang Xianghong²,Shen Xin²,Sun Yue¹^ORCID

Affiliation:

1. Key Laboratory of Physical Electronics and Devices, Ministry of Education, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, China

2. Department of Microelectronics, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, China

Funder

National Natural Science Foundation of China

Foundation of State Key Laboratory of Pulsed Power Laser Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10294316/10256077.pdf?arnumber=10256077

Reference38 articles.

1. Collapsing-field-domain-based 200 GHz solid-state source

2. A Total Internal Reflection Photoconductive Switch

3. Ultrahigh field multiple Gunn domains as the physical reason for superfast (picosecond range) switching of a bipolar GaAs transistor

4. Current Filaments in Semiconductors

5. Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity

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