Collapsing-field-domain-based 200 GHz solid-state source-Reference-Cited by-同舟云学术

Collapsing-field-domain-based 200 GHz solid-state source

Published:2019-09-16 Issue:12 Volume:115 Page:123501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vainshtein Sergey N.¹^ORCID,Duan Guoyong¹^ORCID,Yuferev Valentin S.²^ORCID,Zemlyakov Valery E.³,Egorkin Vladimir I.³^ORCID,Kalyuzhnyy Nikolay A.²^ORCID,Maleev Nikolai A.²,Egorov Anton Yu.⁴^ORCID,Kostamovaara Juha T.¹

Affiliation:

1. Oulu University/CAS Group, Erkki Koiso-Kanttila Street 3, FIN-90014 Oulu, Finland

2. Ioffe Institute, Politehnicheskaya 26, 194021 St. Petersburg, Russian Federation

3. National Research University of Electronic Technology (MIET), Shokin Square 1, 124498 Moscow, Russian Federation

4. ITMO University, Kronverkskiy Av.49, 197101 Saint-Petersburg, Russian Federation

Funder

Academy of Finland

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5091616

Reference20 articles.

1. Effect of hot-carrier energy relaxation on main properties of collapsing field domains in avalanching GaAs

2. Ultrahigh field multiple Gunn domains as the physical reason for superfast (picosecond range) switching of a bipolar GaAs transistor

3. Terahertz Emission from Collapsing Field Domains during Switching of a Gallium Arsenide Bipolar Transistor

4. Superfast high-current switching of GaAs avalanche transistor

5. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

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1. Subnanosecond switching of GaAs diode due to impact ionization in collapsing bipolar Gunn domains;Solid State Communications;2024-02

2. The Effect of Maintaining a High Conductivity State in High-Voltage GaAs Diodes Switched-on in the Delayed Avalanche Breakdown Mode;Technical Physics Letters;2023-12

3. Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch;IEEE Transactions on Electron Devices;2023-11

4. Fivefold Peak Power Boost in HBT-Driven GaAs Collapsing-Field-Domain-Based Sub-THz Source;IEEE Electron Device Letters;2023-10

5. Self-Sustaining of the Conducting State and Bipolar Ionizing Gunn Domains in Pulse Avalanche Gallium Arsenide Diodes;Bulletin of the Russian Academy of Sciences: Physics;2023-06