Subnanosecond switching of GaAs diode due to impact ionization in collapsing bipolar Gunn domains

Author:

Ivanov Mikhail,Rozhkov AlexanderORCID,Rodin PavelORCID

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference41 articles.

1. Subnanosecond current drops in delayed breakdown of silicon p-n junctions;Grekhov;Sov. Tech. Phys. Lett.,1979

2. Formation of high picosecond-range voltage drops across gallium arsenide diodes;Alferov;Sov. Tech. Phys. Lett.,1988

3. High-power subnanosecond switch;Grekhov;Electron. Lett.,1981

4. New power semiconductor devices for generation of Nano- and subnanosecond pulses;Kardo-Sysoev,2001

5. Pulse power generation in nano- and subnanosecond range by means of ionizing fronts in semiconductors: the state of the art and future prospects;Grekhov;IEEE Trans. Plasma Sci.,2010

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