Effect of hot-carrier energy relaxation on main properties of collapsing field domains in avalanching GaAs-Reference-Cited by-同舟云学术

Effect of hot-carrier energy relaxation on main properties of collapsing field domains in avalanching GaAs

Author:

Palankovski V.¹²^ORCID,Vainshtein S.²,Yuferev V.³,Kostamovaara J.²,Egorkin V.⁴^ORCID

Affiliation:

1. Institute for Microelectronics, Technical University Vienna, 1040 Vienna, Austria

2. Electronics Laboratory, Department of Electrical Engineering, University of Oulu, 90014 Oulu, Finland

3. Department of Applied Mathematics and Mathematical Physics, Ioffe Institute, 194021 St. Petersburg, Russia

4. National Research University of Electronic Technology MIET, 124498 Zelenograd, Moscow, Russia

Funder

Austrian Science Fund (FWF)

Suomen Akatemia (Academy of Finland)

Tekes (Finnish Funding Agency for Innovation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference32 articles.

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