Ultrahigh field multiple Gunn domains as the physical reason for superfast (picosecond range) switching of a bipolar GaAs transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1839638
Reference24 articles.
1. Laser diode structure for the generation of high-power picosecond optical pulses
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4. Superfast high-current switching of GaAs avalanche transistor
5. Picosecond range switching of a GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains
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