Half trigger operation mode of 4H-SiC Diode Avalanche Shaper
Author:
Affiliation:
1. Xidian University School of Microelectronics,Xi'an,China,710071
Funder
National Natural Science Foundation of China
Xidian University
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963237.pdf?arnumber=9963237
Reference8 articles.
1. Parameters of silicon carbide diode avalanche shapers for the picosecond range
2. Performance evaluation of picosecond high-voltage power switches based on propagation of superfast impact ionization fronts in SiC structures
3. Efficiency Study of a 2.2 kV, 1 ns, 1 MHz Pulsed Power Generator Based on a Drift-Step-Recovery Diode
4. Demonstration of Picosecond 4H-SiC Diode Avalanche Shaper With Voltage Rise Rate of 11.14 kV/ns and Peak Power Density of 62 MW/cm$^2$
5. Silicon diodes in avalanche pulse-sharpening applications
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