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Demonstration of Picosecond 4H-SiC Diode Avalanche Shaper With Voltage Rise Rate of 11.14 kV/ns and Peak Power Density of 62 MW/cm$^2$

  • Published:2022-04 Issue:4 Volume:37 Page:3724-3727
  • ISSN:0885-8993
  • Container-title:IEEE Transactions on Power Electronics
  • language:
  • Short-container-title:IEEE Trans. Power Electron.

Author:

Zhou YuORCID,Tang XiaoyanORCID,Song QingwenORCID,Han Chao,Yuan HaoORCID,Liu YancongORCID,Liu Sicheng,Zhang YimenORCID,Zhang YumingORCID

Funder

National Key R&D Program of China

Science Challenge Project

Key Research and Development Program of Shaanxi

Key Area R&D Program of Guangdong Province

Innovation Capability Support Program of Shaanxi

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Subnanosecond switching of GaAs diode due to impact ionization in collapsing bipolar Gunn domains;Solid State Communications;2024-02

2. Investigation on Triggering Mode and Criterion of 4H-SiC Diode Avalanche Shaper;IEEE Transactions on Electron Devices;2023-08

3. Direct comparison of silicon carbide and silicon diode avalanche shaper in multi-pulse applications;Journal of Crystal Growth;2023-02

4. Half trigger operation mode of 4H-SiC Diode Avalanche Shaper;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
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