Picosecond-range switching of high-voltage Si diode due to the delayed impact-ionization breakdown: Experiments vs simulations
Author:
Affiliation:
1. Ioffe Institute, 26 Politekhnicheskaya, St.-Petersburg 194021, Russia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0077092
Reference55 articles.
1. High-power subnanosecond switch
2. Ultra-wideband Radar Technology
3. Silicon diodes in avalanche pulse-sharpening applications
4. Ultra-wideband transmitter research
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