Regulating phase transformation kinetics via redox reaction in ferroelectric Ge-doped HfO2
Author:
Affiliation:
1. Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2. JST PRESTO, Saitama 332-0012, Japan
3. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8569, Japan
Funder
Core Research for Evolutional Science and Technology
JSPS KAKENHI
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0028620
Reference29 articles.
1. Ferroelectricity in yttrium-doped hafnium oxide
2. The Properties of Ferroelectric Films at Small Dimensions
3. Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling
4. Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates
5. Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm
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