Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm-Reference-Cited by-同舟云学术

Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

Published:2018-03-05 Issue:10 Volume:112 Page:102902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tian Xuan¹^ORCID,Shibayama Shigehisa¹,Nishimura Tomonori¹,Yajima Takeaki¹,Migita Shinji²,Toriumi Akira¹

Affiliation:

1. Department of Materials Engineering, The University of Tokyo, Hongo, Tokyo 113-8656, Japan

2. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8569, Japan

Funder

China Scholarship Council

MEXT | JST | Core Research for Evolutional Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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4. Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

5. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

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