Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale-Reference-Cited by-同舟云学术

Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

Published:2009-08-21 Issue:10 Volume:9 Page:3539-3543
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Gruverman A.¹,Wu D.¹,Lu H.¹,Wang Y.¹,Jang H. W.¹,Folkman C. M.¹,Zhuravlev M. Ye.¹,Felker D.¹,Rzchowski M.¹,Eom C.-B.¹,Tsymbal E. Y.¹

Affiliation:

1. University of Nebraska, Lincoln, Nebraska 68588, North Carolina State University, Raleigh, North Carolina 27695, University of Wisconsin-Madison, Wisconsin 53706, and Kurnakov Institute for General and Inorganic Chemistry, RAS, Moscow, Russia

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl901754t

Reference31 articles.

1. Tunneling Across a Ferroelectric

2. Nanoionics-based resistive switching memories

3. Electrical current distribution across a metal–insulator–metal structure during bistable switching

4. Electroforming and Switching in Oxides of Transition Metals: The Role of Metal–Insulator Transition in the Switching Mechanism

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