Solid-state memories based on ferroelectric tunnel junctions-Reference-Cited by-同舟云学术

Solid-state memories based on ferroelectric tunnel junctions

Published:2011-12-04 Issue:2 Volume:7 Page:101-104
ISSN:1748-3387
Container-title:Nature Nanotechnology
language:en
Short-container-title:Nature Nanotech

Author:

Chanthbouala André,Crassous Arnaud,Garcia Vincent,Bouzehouane Karim,Fusil Stéphane,Moya Xavier,Allibe Julie,Dlubak Bruno,Grollier Julie,Xavier Stéphane,Deranlot Cyrile,Moshar Amir,Proksch Roger,Mathur Neil D.,Bibes Manuel,Barthélémy Agnès

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science,Biomedical Engineering,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://www.nature.com/articles/nnano.2011.213.pdf

Reference31 articles.

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2. Ikeda, S. et al. Magnetic tunnel junctions for spintronic memories and beyond. IEEE Trans. Electron. Dev. 54, 991–1002 (2007).

3. Moodera, J. S., Kinder, L. R., Wong, T. M. & Meservey, R. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. Phys. Rev. Lett. 74, 3273–3276 (1995).

4. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nature Mater. 6, 833–840 (2007).

5. Yang, J. J. et al. Memristive switching mechanisms for metal/oxide/metal nanodevices. Nature Nanotech. 3, 429–433 (2008).

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