Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates-Reference-Cited by-同舟云学术

Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates

Published:2017-11 Issue: Volume:70 Page:239-245
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Shiraishi Takahisa,Katayama Kiliha,Yokouchi Tatsuhiko,Shimizu Takao,Oikawa Takahiro,Sakata Osami,Uchida Hiroshi,Imai Yasuhiko,Kiguchi Takanori,Konno Toyohiko J.,Funakubo Hiroshi

Funder

Ministry of Education, Culture, Sports, Science and Technology of Japan

Japan Society for the Promotion of Science

Center for Integrated Nanotechnology Support at Tohoku University

Nanotechnology Network Project of MEXT

Japan Synchrotron Radiation Research Institute

NIMS

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Large irreversible non-180° domain switching after poling treatment in Pb(Zr,Ti)O3 films;Ehara;Appl. Phys. Lett.,2016

5. Depolarization fields in thin ferroelectric films;Mehta;Appl. Phys. Lett.,1973

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