Ferroelectricity in hafnium oxide films doped with magnesium by chemical solution deposition
Author:
Affiliation:
1. Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0077616
Reference43 articles.
1. Integration of lead zirconium titanate thin films for high density ferroelectric random access memory
2. FeRAM technology for high density applications
3. Ferroelectricity in hafnium oxide thin films
4. Ferroelectricity in yttrium-doped hafnium oxide
5. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
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