Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling-Reference-Cited by-同舟云学术

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

Published:2015-11-09 Issue:19 Volume:107 Page:192907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Min Hyuk¹,Kim Han Joon¹,Kim Yu Jin¹,Lee Young Hwan¹,Moon Taehwan¹,Kim Keum Do¹,Hyun Seung Dam¹,Hwang Cheol Seong¹

Affiliation:

1. Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, South Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935588

Reference28 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

3. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

4. The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

5. Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

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