Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric-Reference-Cited by-同舟云学术

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

Published:2014-10-28 Issue:48 Volume:26 Page:8198-8202
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Martin Dominik¹,Müller Johannes²,Schenk Tony¹,Arruda Thomas M.³,Kumar Amit³,Strelcov Evgheni³,Yurchuk Ekaterina¹,Müller Stefan¹,Pohl Darius⁴,Schröder Uwe¹,Kalinin Sergei V.³,Mikolajick Thomas¹⁵

Affiliation:

1. Namlab gGmbH; Nöthnitzerstraße 64 01187 Dresden Germany

2. Fraunhofer IPMS-CNT; Koenigsbrueckerstraße 180 01099 Dresden Germany

3. Imaging and Nanoscale Characterization Group; Center for Nanophase Materials Sciences; Oak Ridge National Laboratory; M.S. 8610 Oak Ridge TN 37831 USA

4. Institute for Metallic Materials; Leibniz Institute for Solid State and Materials Research (IFW) Dresden; P.O. Box 270116 D-01171 Dresden Germany

5. Chair of Nanoelectronic Materials; University of Technology Dresden; 01062 Dresden Germany

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201403115/fullpdf

Reference30 articles.

1. The High-k Solution

2. High dielectric constant oxides

3. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications