The effects of layering in ferroelectric Si-doped HfO2 thin films-Reference-Cited by-同舟云学术

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The effects of layering in ferroelectric Si-doped HfO2 thin films

Published:2014-08-18 Issue:7 Volume:105 Page:072906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lomenzo Patrick D.¹,Takmeel Qanit²,Zhou Chuanzhen³,Liu Yang³,Fancher Chris M.³,Jones Jacob L.³,Moghaddam Saeed²,Nishida Toshikazu¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA

2. Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611, USA

3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27696-7907, USA

Funder

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4893738

Reference23 articles.

1. Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

2. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

3. Ferroelectric phenomena in Si-doped HfO2thin films with TiN and Ir electrodes

4. The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

5. Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes

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2. Artificial Neural Network Classification Using Al-Doped HfO_x-Based Ferroelectric Tunneling Junction with Self-Rectifying Behaviors;ACS Materials Letters;2024-05-13

3. Wurtzite and fluorite ferroelectric materials for electronic memory;Nature Nanotechnology;2023-04-27

4. MFSFET with 5nm Thick Ferroelectric Nondoped HfO<sub>2</sub> Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition;IEICE Transactions on Electronics;2022-10-01

5. Synergistic effect of Si concentration and distribution on ferroelectric properties optimization of Si:HfO₂ ferroelectric thin films;Journal of Physics: Condensed Matter;2022-08-04

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