Ferroelectric phenomena in Si-doped HfO2thin films with TiN and Ir electrodes-Reference-Cited by-同舟云学术

Ferroelectric phenomena in Si-doped HfO2thin films with TiN and Ir electrodes

Published:2014-05 Issue:3 Volume:32 Page:03D123
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Lomenzo Patrick D.,Zhao Peng,Takmeel Qanit,Moghaddam Saeed,Nishida Toshikazu,Nelson Matthew,Fancher Chris M.,Grimley Everett D.,Sang Xiahan,LeBeau James M.,Jones Jacob L.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4873323

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