Impact of CeOx layer insertion on ferroelectric properties of Hf-Zr-O films prepared by chemical solution deposition

Abstract

Abstract Multivalent oxide, CeOx has been formed at the top or bottom of the Hf-Zr-O (HZO) layer by chemical solution deposition (CSD) to obtain the ferroelectric properties of the HZO layer. It is shown that the insertion of a thin CeOx layer significantly enhances the ferroelectric properties of the Y-doped HZO layer. It is found by transmission electron microscope observation that a CeOx(12 nm)/Y-HZO(33 nm) layered structure can be clearly fabricated by the CSD process in spite of high temperature crystallization anneal at 800 °C.