Abstract
Abstract
Electron energy loss spectroscopy—spectrum imaging measurements using a scanning transmission electron microscope are carried out to clarify the details of microstructure at the interface of the CeO
x
-capped Y-HZO film prepared by the chemical solution deposition (CSD) method. We confirmed that by the present CSD the independent capped layer of CeOx successively deposited on Y-HZO. The crystal structure of CeO
x
film is mainly the cubic CeO2 structure with Ce4+. Chemical state maps are also successfully obtained by the multivariate analysis. We found that Ce3+ and Ce4+ coexist in the interface layer with cubic CeO2 crystal structure containing O vacancy. The results of the quantitative elemental distribution maps of energy dispersive X-ray spectroscopy also supported that O vacancies exist at the interface.