Use of selective annealing for growing very large grain silicon on insulator films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93507
Reference8 articles.
1. Lateral Epitaxial Growth in Poly-Si Film over SiO2from Single-Si Seed by Scanning CW Ar Laser Annealing
2. Grain boundaries inp‐njunction diodes fabricated in laser‐recrystallized silicon thin films
3. cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties
4. MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate
5. The use of beam shaping to achieve large‐grain cw laser‐recrystallized polysilicon on amorphous substrates
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