Physics and Electrical Diagnostics of Nanoelectronic Silicon-On-Insulator Structures and Devices

Abstract

This book is devoted to one of the most important field of modern nanoelectronics, namely, nanoelectronic devices based on Silicon-on-Insulator (SOI) structures, and more specifically, to the physics and electrical characterization of these devices. The principal advantages of SOI devices over bulk-Si counterparts are described, and the main areas of their application are outlined. Particular attention is given to the advanced SOI-based structures for nanoscale metal-oxide-semiconductor (MOS) field-effect transistors (FETs), namely: ultra-thin-body SOI MOSFETs, FinFETs, nanowire multi-gate MOSFETs, and junctionless nanowire MOSFETs. Special electrical properties of these nanotransistor structures, associated with their specific architecture and nanometer dimensions, and methods for the determination of their electrical parameters are considered. The book includes research results of the world-famous scientists in the silicon-on-insulator field, but mostly it presents the results of scientific research by the authors of the monograph published in leading international journals. It should be noted that so far no monographs on physics and diagnostics of silicon-on-insulator devices have been published in Ukraine, although silicon-on-insulator is currently recognized as the most advanced and most promising technology for fabricating high-speed, low voltage integrated circuits and key electronic components for modern portable electronic devices such as laptops, mobile phones, smartphones, etc. The book is intended for scientific and engineering workers specializing in the semiconductor electronics. It can also be useful for university teachers, students, and graduate students who are interested in the current state of micro- and nanoelectronics.