Fully Depleted SOI Technology for Ultra Low Power Digital and RF Applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4062841/4062842/04062857.pdf?arnumber=4062857
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Physics and Electrical Diagnostics of Nanoelectronic Silicon-On-Insulator Structures and Devices;2023
2. The advancement of silicon-on-insulator (SOI) devices and their basic properties;Semiconductor Physics, Quantum Electronics and Optoelectronics;2020-09-10
3. SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System;IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences;2014
4. Development of Low Power Cryogenic Readout Integrated Circuits Using Fully-Depleted-Silicon-on-Insulator CMOS Technology for Far-Infrared Image Sensors;Journal of Low Temperature Physics;2012-01-20
5. Low-Power Circuit Applicability of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (HG TFETs);IEICE Transactions on Electronics;2012
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