Transition mechanism of the thin Si-films obtained by the CW laser lateral crystallization from the grain-boundary free highly {100} oriented crystal to the twinned {211} crystal depending on the laser power-Reference-Cited by-同舟云学术

Transition mechanism of the thin Si-films obtained by the CW laser lateral crystallization from the grain-boundary free highly {100} oriented crystal to the twinned {211} crystal depending on the laser power

Published:2019-02-22 Issue:SB Volume:58 Page:SBBJ02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sasaki Nobuo,Arif Muhammad,Uraoka Yukiharu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SB/a=SBBJ02/pdf

Reference48 articles.

1. A strategy for modeling of variations due to grain size in polycrystalline thin-film transistors

2. A Statistical Model to Predict the Performance Variation of Polysilicon TFTs Formed by Grain-Enhancement Technology

3. Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces

4. Change of Si-SiO2Interface Charge by BT Treatment

5. Kink effect in short-channel polycrystalline silicon thin-film transistors

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