Periodic Fine Dimple Lines on the Surface of the Grain-Boundary Free Si Films Grown by Continuous-Wave-Laser Lateral Crystallization
Author:
Affiliation:
1. Sasaki Consulting,Japan
2. NAIST,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103033.pdf?arnumber=10103033
Reference12 articles.
1. Extension of the {100}-Oriented Grain-Boundary Free Si Thin Film Grown by a Continuous-Wave Laser Lateral Crystallization
2. Effect of surface tension on crystal growth of Si thin films by a continuous-wave laser lateral crystallization
3. The structure of high-angle grain boundaries
4. Extension of a 10 mm long {100}-oriented grain boundary free silicon domain crystallized by continuous wave green laser;arif;the 21st int meeting information display virtual,0
5. Power dependence of orientation in low-temperature poly-Si lateral grains crystallized by a continuous-wave laser scan
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