Crystal Growth Study of the grain-Boundary Free (100) Textured Si Thin-Films by Using the CW-Laser Lateral Crystallization-Reference-Cited by-同舟云学术

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Crystal Growth Study of the grain-Boundary Free (100) Textured Si Thin-Films by Using the CW-Laser Lateral Crystallization

Published:2019-10-14 Issue: Volume: Page:
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Container-title:2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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Author:

Sasaki Nobuo,Arif Muhammad,Uraoka Yukiharu,Gotoh Jun,Sugimoto Shigeto

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9320620/9320498/09320629.pdf?arnumber=9320629

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Periodic Fine Dimple Lines on the Surface of the Grain-Boundary Free Si Films Grown by Continuous-Wave-Laser Lateral Crystallization;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

2. Isotropic TFT Characteristics in the {100}-Oriented Grain-Boundary-Free Laser-Crystallized Si Thin Films;Crystals;2023-01-11

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