Structure of (001) GaAs surfaces during epitaxial growth by organometallic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110200
Reference18 articles.
1. X‐ray analysis of GaAs surface reconstructions in H2and N2atmospheres
2. X‐ray analysis of GaAs surface reconstructions in H2and N2atmospheres
3. Gallium arsenide surface reconstructions during organometallic vapor‐phase epitaxy
4. Gallium arsenide surface reconstructions during organometallic vapor‐phase epitaxy
5. Fractional Stoichiometry of the GaAs(001)c(4×4)Surface: AnIn-SituX-Ray Scattering Study
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1. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;Advanced Materials Interfaces;2017-10-10
2. Site-specific chemistry of gallium arsenide metalorganic chemical vapor deposition;Le Journal de Physique IV;1999-09
3. Organometallic vapor phase epitaxy (OMVPE);Materials Science and Engineering: R: Reports;1999-02
4. Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy;Journal of Crystal Growth;1998-12
5. Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy environment;Applied Physics Letters;1998-08-31
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