Site-specific chemistry of gallium arsenide metalorganic chemical vapor deposition
Author:
Publisher
EDP Sciences
Subject
General Physics and Astronomy
Link
http://jp4.journaldephysique.org/10.1051/jp4:1999801/pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reflection Absorption IR Spectroscopy (RAIRS);Surface and Thin Film Analysis;2011-04-12
2. Metalorganic chemical-vapour-deposition (MOCVD) of InGaAs, BGaAs, and BInGaAs: Quantum chemical calculations on the mechanisms;Journal of Crystal Growth;2007-06
3. A computational study of gas-phase and surface reactions in deposition and etching of GaAs and AlAs in the presence of HCl;Journal of Crystal Growth;2004-07
4. Kinetics of phosphine adsorption and phosphorus desorption from gallium and indium phosphide ();Surface Science;2003-08
5. A multiscale study of the selective MOVPE of AlxGa1−xAs in the presence of HCl;Journal of Crystal Growth;2003-02
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