Gallium arsenide surface reconstructions during organometallic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106924
Reference21 articles.
1. GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face
2. Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES
3. Rheed evidence for a domain structure of GaAs(001)−2 × 4 AND −4 × 2 reconstructed surfaces
4. Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE
5. Surface stoichiometry variation associated with GaAs (001) reconstruction transitions
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