Fractional Stoichiometry of the GaAs(001)c(4×4)Surface: AnIn-SituX-Ray Scattering Study-Reference-Cited by-同舟云学术

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Fractional Stoichiometry of the GaAs(001)c(4×4)Surface: AnIn-SituX-Ray Scattering Study

Published:1989-01-30 Issue:5 Volume:62 Page:563-566
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Sauvage-Simkin M.,Pinchaux R.,Massies J.,Calverie P.,Jedrecy N.,Bonnet J.,Robinson I. K.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.62.563/fulltext

Reference21 articles.

1. GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face

2. Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE

3. Surface structure of As-stabilized GaAs(001): 2×4,c(2×8), and domain structures

4. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy

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1. Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1−xNx;Journal of Crystal Growth;2015-12

2. My life and the world of crystals;Physica Scripta;2015-03-25

3. Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy;Frontiers of Physics;2015-02

4. 4.2.3 Semiconductor surfaces, interfaces, and nanostructures;Physics of Solid Surfaces;2015

5. STM analysis of defects at the GaAs(001)-c(4×4) surface;Surface Science;2013-11

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