Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy environment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122139
Reference14 articles.
1. Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces
2. Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition
3. Structure of (001) GaAs surfaces during epitaxial growth by organometallic chemical vapor deposition
4. Optical characterization of surfaces during epitaxial growth using RDS and GIXS
5. Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering
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1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
2. Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy;Physical Review B;2002-07-22
3. The Nature and Origin of Atomic Ordering in Group III-V Antimonide Semiconductor Alloys;Spontaneous Ordering in Semiconductor Alloys;2002
4. Difference of anisotropic structures of InAs/GaAs quantum dots between organometallic vapor-phase epitaxy and molecular beam epitaxy;Journal of Crystal Growth;2000-12
5. SITE-SPECIFIC SURFACE CHEMISTRY OF GaAs (001);Surface Review and Letters;2000-10
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