Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.045314/fulltext
Reference39 articles.
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3. Vacancy controlled interdiffusion of the group V sublattice in strained InGaAs/InGaAsP quantum wells
4. A magneto‐optical study of interdiffusion in InGaAs/InP quantum wells: Effects of heat treatment, substrates, and dopants
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