A kinetic model for As and P incorporation behaviors in GaAsP grown by gas‐source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354155
Reference10 articles.
1. Phosphorus incorporation in GaAsP grown by remote-plasma MOCVD
2. Alloying mechanisms in MOVPE GaAs1-xPx
3. Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors
4. Thermodynamic aspects of OMVPE
5. Gas source molecular beam epitaxy of GaxIn1−xPyAs1−y
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