Electronic properties of the EC-0.6 eV electron trap in n-type GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2830860
Reference21 articles.
1. Analysis of deep levels inn‐type GaN by transient capacitance methods
2. Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy
3. Deep levels in the upper band‐gap region of lightly Mg‐doped GaN
4. Deep level defects in n-type GaN grown by molecular beam epitaxy
5. Optical characterization of the “E2” deep level in GaN
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
2. Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements;Microelectronics Reliability;2020-11
3. Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3;Applied Physics Letters;2020-10-05
4. Identification of origin of E C –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy;Applied Physics Express;2020-06-29
5. Electrical characterization of metal-semiconductor-metal structure of pseudomorphic InGaN on GaN: Simulation and experiments;physica status solidi (a);2016-02-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3